Optical and transport properties of short-period InAs/GaAs superlattices near quantum dot formation
Identifieur interne : 000802 ( Russie/Analysis ); précédent : 000801; suivant : 000803Optical and transport properties of short-period InAs/GaAs superlattices near quantum dot formation
Auteurs : RBID : Pascal:02-0507563Descripteurs français
- Pascal (Inist)
- Propriété optique, Phénomène transport, Epitaxie jet moléculaire, Epaisseur, Structure bande, Fonction onde, Photoluminescence, Effet Shubnikov de Haas, Effet Hall, Densité électron, Magnétorésistance, Sous bande, Conduction métallique, Indium arséniure, Semiconducteur, Composé binaire, Gallium arséniure, Superréseau, Point quantique, Puits quantique, As In, InAs, As Ga, GaAs, 8115H, 7321C, 7855.
English descriptors
- KwdEn :
- Band structure, Binary compounds, Electron density, Gallium arsenides, Hall effect, Indium arsenides, Magnetoresistance, Metallic conduction, Molecular beam epitaxy, Optical properties, Photoluminescence, Quantum dots, Quantum wells, Semiconductor materials, Shubnikov-de Haas effect, Subband, Superlattices, Thickness, Transport processes, Wave functions.
Abstract
We have investigated the optical and transport properties of short-period superlattices of InAs/GaAs, grown by molecular beam epitaxy, with different numbers of periods (3 ≤ N ≤ 24) and a total thickness of 14 nm. Band structure calculations show that these superlattices represent a quantum well with average composition In0.16Ga0.84As. The electron wavefunctions are only slightly modulated by the superlattice potential as compared to a single quantum well with the same composition, which was grown as a reference sample. The photoluminescence, the resistance, the Shubnikov-de Haas effect and the Hall effect have been measured as a function of the InAs layer thickness Q in the range of 0.33 ≤ Q ≤ 2.7 monolayers (ML). The electron densities range from 6.8 to 11.5 × 1011 cm-2 for Q ≤ 2.0 ML. The photoluminescence and magneto-transport data show that only one sub-band is occupied. When Q ≤ 2.7 ML, quantum dots are formed and the metallic type of conductivity changes to variable range hopping conductivity.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical and transport properties of short-period InAs/GaAs superlattices near quantum dot formation</title><author><name sortKey="Kulbachinskii, V A" uniqKey="Kulbachinskii V">V. A. Kulbachinskii</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Low Temperature Physics Department, Moscow State University</s1><s2>119899, Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Lunin, R A" uniqKey="Lunin R">R. A. Lunin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Low Temperature Physics Department, Moscow State University</s1><s2>119899, Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Rogozin, V A" uniqKey="Rogozin V">V. A. Rogozin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Low Temperature Physics Department, Moscow State University</s1><s2>119899, Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Mokerov, V G" uniqKey="Mokerov V">V. G. Mokerov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Radioengineering and Electronics, Russian Academy of Sciences</s1><s2>103907 Moscow</s2><s3>RUS</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Fedorov, Yu V" uniqKey="Fedorov Y">Yu V. Fedorov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Radioengineering and Electronics, Russian Academy of Sciences</s1><s2>103907 Moscow</s2><s3>RUS</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Khabarov, Yu V" uniqKey="Khabarov Y">Yu V. Khabarov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Radioengineering and Electronics, Russian Academy of Sciences</s1><s2>103907 Moscow</s2><s3>RUS</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="De Visser, A" uniqKey="De Visser A">A. De Visser</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Van der Waals-Zeeman Institute, University of Amsterdam, Valckenierstraat 65</s1><s2>1018 XE Amsterdam</s2><s3>NLD</s3><sZ>7 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>1018 XE Amsterdam</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0507563</idno><date when="2002">2002</date><idno type="stanalyst">PASCAL 02-0507563 INIST</idno><idno type="RBID">Pascal:02-0507563</idno><idno type="wicri:Area/Main/Corpus">00E643</idno><idno type="wicri:Area/Main/Repository">00ED66</idno><idno type="wicri:Area/Russie/Extraction">000802</idno></publicationStmt><seriesStmt><idno type="ISSN">0268-1242</idno><title level="j" type="abbreviated">Semicond. sci. technol.</title><title level="j" type="main">Semiconductor science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Band structure</term><term>Binary compounds</term><term>Electron density</term><term>Gallium arsenides</term><term>Hall effect</term><term>Indium arsenides</term><term>Magnetoresistance</term><term>Metallic conduction</term><term>Molecular beam epitaxy</term><term>Optical properties</term><term>Photoluminescence</term><term>Quantum dots</term><term>Quantum wells</term><term>Semiconductor materials</term><term>Shubnikov-de Haas effect</term><term>Subband</term><term>Superlattices</term><term>Thickness</term><term>Transport processes</term><term>Wave functions</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Propriété optique</term><term>Phénomène transport</term><term>Epitaxie jet moléculaire</term><term>Epaisseur</term><term>Structure bande</term><term>Fonction onde</term><term>Photoluminescence</term><term>Effet Shubnikov de Haas</term><term>Effet Hall</term><term>Densité électron</term><term>Magnétorésistance</term><term>Sous bande</term><term>Conduction métallique</term><term>Indium arséniure</term><term>Semiconducteur</term><term>Composé binaire</term><term>Gallium arséniure</term><term>Superréseau</term><term>Point quantique</term><term>Puits quantique</term><term>As In</term><term>InAs</term><term>As Ga</term><term>GaAs</term><term>8115H</term><term>7321C</term><term>7855</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have investigated the optical and transport properties of short-period superlattices of InAs/GaAs, grown by molecular beam epitaxy, with different numbers of periods (3 ≤ N ≤ 24) and a total thickness of 14 nm. Band structure calculations show that these superlattices represent a quantum well with average composition In<sub>0.16</sub>Ga<sub>0.84</sub>As. The electron wavefunctions are only slightly modulated by the superlattice potential as compared to a single quantum well with the same composition, which was grown as a reference sample. The photoluminescence, the resistance, the Shubnikov-de Haas effect and the Hall effect have been measured as a function of the InAs layer thickness Q in the range of 0.33 ≤ Q ≤ 2.7 monolayers (ML). The electron densities range from 6.8 to 11.5 × 10<sup>11</sup> cm<sup>-2</sup> for Q ≤ 2.0 ML. The photoluminescence and magneto-transport data show that only one sub-band is occupied. When Q ≤ 2.7 ML, quantum dots are formed and the metallic type of conductivity changes to variable range hopping conductivity.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0></fA01><fA02 i1="01"><s0>SSTEET</s0></fA02><fA03 i2="1"><s0>Semicond. sci. technol.</s0></fA03><fA05><s2>17</s2></fA05><fA06><s2>9</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical and transport properties of short-period InAs/GaAs superlattices near quantum dot formation</s1></fA08><fA11 i1="01" i2="1"><s1>KULBACHINSKII (V. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>LUNIN (R. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>ROGOZIN (V. A.)</s1></fA11><fA11 i1="04" i2="1"><s1>MOKEROV (V. G.)</s1></fA11><fA11 i1="05" i2="1"><s1>FEDOROV (Yu V.)</s1></fA11><fA11 i1="06" i2="1"><s1>KHABAROV (Yu V.)</s1></fA11><fA11 i1="07" i2="1"><s1>DE VISSER (A.)</s1></fA11><fA14 i1="01"><s1>Low Temperature Physics Department, Moscow State University</s1><s2>119899, Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Radioengineering and Electronics, Russian Academy of Sciences</s1><s2>103907 Moscow</s2><s3>RUS</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>Van der Waals-Zeeman Institute, University of Amsterdam, Valckenierstraat 65</s1><s2>1018 XE Amsterdam</s2><s3>NLD</s3><sZ>7 aut.</sZ></fA14><fA20><s1>947-951</s1></fA20><fA21><s1>2002</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21041</s2><s5>354000101997930110</s5></fA43><fA44><s0>0000</s0><s1>© 2002 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>18 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>02-0507563</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>We have investigated the optical and transport properties of short-period superlattices of InAs/GaAs, grown by molecular beam epitaxy, with different numbers of periods (3 ≤ N ≤ 24) and a total thickness of 14 nm. Band structure calculations show that these superlattices represent a quantum well with average composition In<sub>0.16</sub>Ga<sub>0.84</sub>As. The electron wavefunctions are only slightly modulated by the superlattice potential as compared to a single quantum well with the same composition, which was grown as a reference sample. The photoluminescence, the resistance, the Shubnikov-de Haas effect and the Hall effect have been measured as a function of the InAs layer thickness Q in the range of 0.33 ≤ Q ≤ 2.7 monolayers (ML). The electron densities range from 6.8 to 11.5 × 10<sup>11</sup> cm<sup>-2</sup> for Q ≤ 2.0 ML. The photoluminescence and magneto-transport data show that only one sub-band is occupied. When Q ≤ 2.7 ML, quantum dots are formed and the metallic type of conductivity changes to variable range hopping conductivity.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15H</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C21C</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H55</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Propriété optique</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Optical properties</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Phénomène transport</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Transport processes</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Epaisseur</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Thickness</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Structure bande</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Band structure</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Fonction onde</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Wave functions</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Effet Shubnikov de Haas</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Shubnikov-de Haas effect</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Effet Hall</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Hall effect</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Densité électron</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Electron density</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Magnétorésistance</s0><s5>12</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Magnetoresistance</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Sous bande</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Subband</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Subbanda</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Conduction métallique</s0><s5>14</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Metallic conduction</s0><s5>14</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Conducción metálica</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>16</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>16</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Composé binaire</s0><s5>17</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Binary compounds</s0><s5>17</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Superréseau</s0><s5>19</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Superlattices</s0><s5>19</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Point quantique</s0><s5>20</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Quantum dots</s0><s5>20</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Puits quantique</s0><s5>21</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Quantum wells</s0><s5>21</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>As In</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>53</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>As Ga</s0><s4>INC</s4><s5>54</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>GaAs</s0><s4>INC</s4><s5>55</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>8115H</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>7321C</s0><s2>PAC</s2><s4>INC</s4><s5>57</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>7855</s0><s2>PAC</s2><s4>INC</s4><s5>58</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>48</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>48</s5></fC07><fN21><s1>294</s1></fN21><fN82><s1>PSI</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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